| Производитель | INFINEON TECHNOLOGIES AG. |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 2.1 V |
| Configuration: | Dual |
| Основные параметры | |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 2.1 V |
| Configuration: | Dual |
| Continuous Collector Current at 25 C: | 580 A |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package/Case: | 62 mm |
| Packaging: | Tray |
| Part # Aliases: | SP000370613 FF450R12KT4HOSA1 |
| Pd - Power Dissipation: | 2400 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Series: | Trenchstop IGBT4-T4 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | TRENCHSTOP |
| Вес, г | 323 |
![FS100R12KT3BOSA1, БТИЗ массив и модульный транзистор, Six Pack [Full Bridge], 100 А, 1.7 В, 480 Вт, 125 °C, Module](https://euroimport-it.com/wp-content/uploads/2024/05/doc005272624.jpg)
