| Производитель | Semikron Elektronik |
| Корпус | GB |
| Channel Type | N |
| Configuration | Dual Half Bridge |
| Maximum Collector Emitter Voltage | 1200 V |
Биполярный транзистор IGBT, 580 Вт
| Основные параметры | |
| Корпус | GB |
| Channel Type | N |
| Configuration | Dual Half Bridge |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 115 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | Panel Mount |
| Package Type | SEMITRANS2 |
| Pin Count | 7 |
| Transistor Configuration | Series |
| Вес, г | 310 |
