| Производитель | INFINEON TECHNOLOGIES AG. |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 750 V |
| Maximum Continuous Collector Current | 820 A |
| Maximum Gate Emitter Voltage: | 20 V |
IGBT модуль N-канальный 750В 450А 714Вт автомобильного применения 33-Pin AG-HYBRIDD-1 лоток
| Основные параметры | |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 750 V |
| Maximum Continuous Collector Current | 820 A |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Power Dissipation | 20 mW |
| Number of Transistors | 6 |
| Package Type | HYBRID |
| Pin Count | 20 |
| Transistor Configuration | Six Pack |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 750 V |
| Collector-Emitter Saturation Voltage: | 1.1 V |
| Configuration: | 6-Pack |
| Continuous Collector Current at 25 C: | 450 A |
| Factory Pack Quantity: Factory Pack Quantity: | 6 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package / Case: | Module |
| Packaging: | Tray |
| Part # Aliases: | FS820R08A6P2B SP001499708 |
| Pd - Power Dissipation: | 714 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Series: | IGBT EDT2 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | HybridPACK PressFIT |
| Вес, г | 735 |
![TIP112, Биполярный транзистор, NPN, (Darlington) [TO-220]](https://euroimport-it.com/wp-content/uploads/2024/09/doc001210728.jpg)
