FS75R12W2T4, IGBT Modules IGBT 1200V 75A

Код товара: 25706
Артикул: FS75R12W2T4
Характеристики
Производитель INFINEON TECHNOLOGIES AG.
Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.85 V
Configuration: 6-Pack
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17750,00 
наличие:
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SemiconductorsDiscrete SemiconductorsTransistorsIGBT Modules
Основные параметры
Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.85 V
Configuration: 6-Pack
Continuous Collector Current at 25 C: 107 A
Factory Pack Quantity: Factory Pack Quantity: 15
Gate-Emitter Leakage Current: 100 nA
Manufacturer: Infineon
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -40 C
Mounting Style: Chassis Mount
Packaging: Tray
Part # Aliases: SP000404118 FS75R12W2T4BOMA1
Pd - Power Dissipation: 375 W
Product Category: IGBT Modules
Product Type: IGBT Modules
Product: IGBT Silicon Modules
Series: Trenchstop IGBT4-T4
Subcategory: IGBTs
Technology: Si
Tradename: EasyPACK
Вес, г 39
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