FS75R12KE3G, IGBT Modules 1200V 75A 3-PHASE

Код товара: 25565
Артикул: FS75R12KE3G
Характеристики
Производитель INFINEON TECHNOLOGIES AG.
Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Configuration 3 Phase Bridge
смотреть полные характеристики
45270,00 
наличие:
Выберите количество:
SemiconductorsDiscrete SemiconductorsTransistorsIGBT Modules

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V.

Основные параметры
Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Configuration 3 Phase Bridge
Continuous Collector Current at 25 C: 105 A
Factory Pack Quantity: Factory Pack Quantity: 10
Gate-Emitter Leakage Current: 400 nA
Manufacturer: Infineon
Maximum Gate Emitter Voltage ±20V
Maximum Operating Temperature +125 °C
Minimum Operating Temperature -40 °C
Mounting Style: Chassis Mount
Package / Case: EconoPACK 3B
Packaging: Tray
Part # Aliases: SP000100418 FS75R12KE3GBOSA1
Pd - Power Dissipation: 355 W
Product Category: IGBT Modules
Product Type: IGBT Modules
Product: IGBT Silicon Modules
Series: IGBT3-E3
Subcategory: IGBTs
Technology: Si
Tradename: EconoPACK
Channel Type N
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 100 A
Maximum Power Dissipation 355 W
Mounting Type PCB Mount
Package Type ECONO3
Pin Count 35
Switching Speed 1MHz
Transistor Configuration 3 Phase
Вес, г 200