| Производитель | INFINEON TECHNOLOGIES AG. |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 75 A |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 7 |
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 355 W, maximum gate threshold voltage is 6.
| Основные параметры | |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 75 A |
| Maximum Gate Emitter Voltage | ±20V |
| Number of Transistors | 7 |
| Package Type | EconoPIM |
| Automotive | No |
| Channel Type | N |
| Configuration | Array 7 |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 75 |
| Maximum Gate Emitter Leakage Current (uA) | 0.1 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 385 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Screw |
| Packaging | Tray |
| Part Status | Active |
| PCB changed | 35 |
| Pin Count | 35 |
| PPAP | No |
| Supplier Package | ECONO3-3 |
| Typical Collector Emitter Saturation Voltage (V) | 1.85 |
| Вес, г | 5.42 |
