FP40R12KE3GBOSA1, FP40R12KE3GBOSA1 3 Phase Bridge IGBT Module, 55 A 1200 V, 35-Pin ECONO3, PCB Mount

Код товара: 22130
Артикул: FP40R12KE3GBOSA1
Характеристики
Производитель INFINEON TECHNOLOGIES AG.
Channel Type N
Configuration 3 Phase Bridge
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 55 A
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48950,00 
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SemiconductorsDiscrete SemiconductorsIGBTs

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V.

Основные параметры
Channel Type N
Configuration 3 Phase Bridge
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 55 A
Maximum Gate Emitter Voltage ±20V
Maximum Operating Temperature +125 °C
Maximum Power Dissipation 210 W
Minimum Operating Temperature -40 °C
Mounting Type PCB Mount
Package Type ECONO3
Pin Count 35
Switching Speed 1MHz
Transistor Configuration 3 Phase
Base Product Number FP40R12 ->
Current - Collector (Ic) (Max) 55A
Current - Collector Cutoff (Max) 1mA
ECCN EAR99
HTSUS 8541.29.0095
IGBT Type Trench Field Stop
Input Standard
Input Capacitance (Cies) @ Vce 2.5nF @ 25V
Moisture Sensitivity Level (MSL) Not Applicable
NTC Thermistor Yes
Operating Temperature -40В°C ~ 125В°C
Package Bulk
Package / Case Module
Power - Max 210W
REACH Status REACH Unaffected
Supplier Device Package Module
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V | 40A
Voltage - Collector Emitter Breakdown (Max) 1200V
Вес, г 0.308