| Производитель | INFINEON TECHNOLOGIES AG. |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 900 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 5.1 kW |
| Основные параметры | |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 900 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 5.1 kW |
| Number of Transistors | 2 |
| Вес, г | 1 |
