FF600R12ME4EB11BOSA1

Код товара: 19434
Артикул: N/A
Характеристики
Производитель INFINEON TECHNOLOGIES AG.
Base Product Number FF600R12 ->
Configuration Half Bridge
Current - Collector (Ic) (Max) 995A
Current - Collector Cutoff (Max) 3mA
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60760,00 
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Discrete Semiconductor ProductsTransistors – IGBTs – Modules

Модуль IGBT Trench Field Stop Half Bridge 1200V 995A 4050W Модуль для монтажа на шасси

Основные параметры
Base Product Number FF600R12 ->
Configuration Half Bridge
Current - Collector (Ic) (Max) 995A
Current - Collector Cutoff (Max) 3mA
ECCN EAR99
HTSUS 8541.29.0095
IGBT Type Trench Field Stop
Input Standard
Input Capacitance (Cies) @ Vce 37nF @ 25V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Chassis Mount
NTC Thermistor Yes
Operating Temperature -40В°C ~ 150В°C
Package Tray
Package / Case Module
Power - Max 4050W
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant
Supplier Device Package Module
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V | 600A
Voltage - Collector Emitter Breakdown (Max) 1200V
Channel Type N
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 600 A
Maximum Gate Emitter Voltage 20V
Maximum Power Dissipation 20 mW
Number of Transistors 2
Package Type ECONODUAL
Pin Count 13
Transistor Configuration Common Emitter
Вес, г 0.36