| Производитель | INFINEON TECHNOLOGIES AG. |
| Корпус | AG-62MMHB |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 450 A |
| Maximum Gate Emitter Voltage | ±20V |
Биполярный транзистор IGBT 1200В 300А
| Основные параметры | |
| Корпус | AG-62MMHB |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 450 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 1.6 kW |
| Number of Transistors | 2 |
| Automotive | Unknown |
| Channel Type | N |
| Configuration | Dual |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Collector-Emitter Voltage (V) | 1200 |
| Maximum Continuous Collector Current (A) | 450 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1600 |
| Minimum Operating Temperature (°C) | -40 |
| Mounting | Screw |
| Packaging | Tray |
| Part Status | Active |
| PCB changed | 7 |
| Pin Count | 7 |
| PPAP | Unknown |
| Supplier Package | 62MM-1 |
| Typical Collector Emitter Saturation Voltage (V) | 1.75 |
| Вес, г | 365.3 |
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