| Производитель | INFINEON TECHNOLOGIES AG. |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1700 V |
| Collector-Emitter Saturation Voltage: | 2.3 V |
| Configuration | Common Emitter |
The Infineon dual IGBT module with fast IGBT4 and emitter controlled 4 diode. Optimal electrical performance
| Основные параметры | |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1700 V |
| Collector-Emitter Saturation Voltage: | 2.3 V |
| Configuration | Common Emitter |
| Continuous Collector Current at 25 C: | 310 A |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package / Case: | Module |
| Packaging: | Tray |
| Part # Aliases: | FF200R17KE4 SP000713374 |
| Pd - Power Dissipation: | 1250 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Series: | FFXR17K4H |
| Subcategory: | IGBTs |
| Technology: | Trench/Field Stop |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 1700 V |
| Maximum Continuous Collector Current | 200 A |
| Maximum Power Dissipation | 1250 W |
| Mounting Type | Panel Mount |
| Number of Transistors | 1 |
| Package Type | 62MMHB |
| Pin Count | 7 |
