FF200R17KE3HOSA1

Код товара: 17776
Артикул: N/A
Характеристики
Производитель INFINEON TECHNOLOGIES AG.
Base Product Number FF200R17 ->
Configuration Half Bridge
Current - Collector (Ic) (Max) 310A
Current - Collector Cutoff (Max) 3mA
смотреть полные характеристики
46120,00 
наличие:
Выберите количество:
Discrete Semiconductor ProductsTransistors – IGBTs – Modules

Модуль IGBT Trench Field Stop Half Bridge 1700V 310A 1250W Модуль для монтажа на шасси

Основные параметры
Base Product Number FF200R17 ->
Configuration Half Bridge
Current - Collector (Ic) (Max) 310A
Current - Collector Cutoff (Max) 3mA
ECCN EAR99
HTSUS 8541.29.0095
IGBT Type Trench Field Stop
Input Standard
Input Capacitance (Cies) @ Vce 18nF @ 25V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Chassis Mount
NTC Thermistor No
Operating Temperature -40В°C ~ 125В°C (TJ)
Package Bulk
Package / Case Module
Power - Max 1250W
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant
Series C ->
Supplier Device Package Module
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V | 200A
Voltage - Collector Emitter Breakdown (Max) 1700V
Automotive No
Channel Type N
ECCN (US) EAR99
EU RoHS Compliant
Maximum Collector-Emitter Voltage (V) 1700
Maximum Continuous Collector Current (A) 310
Maximum Gate Emitter Leakage Current (uA) 0.4
Maximum Gate Emitter Voltage (V) ±20
Maximum Operating Temperature (°C) 125
Maximum Power Dissipation (mW) 1250
Minimum Operating Temperature (°C) -40
Mounting Screw
Packaging Tray
Part Status Active
PCB changed 7
Pin Count 7
PPAP No
Supplier Package 62MM-1
Typical Collector Emitter Saturation Voltage (V) 2
Вес, г 0.337