| Производитель | INFINEON TECHNOLOGIES AG. |
| Корпус | 62 mm |
| Channel Type | N |
| Configuration | Series |
| Maximum Collector Emitter Voltage | 1200 V |
Биполярный транзистор IGBT, 1200В, 200А, 1100Вт
| Основные параметры | |
| Корпус | 62 mm |
| Channel Type | N |
| Configuration | Series |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 320 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1100 W |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | Panel Mount |
| Package Type | 62MM Module |
| Pin Count | 3 |
| Transistor Configuration | Series |
| Вес, г | 306.5 |
