| Производитель | INFINEON TECHNOLOGIES AG. |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 3.2 V |
| Configuration: | Dual |
| Основные параметры | |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 3.2 V |
| Configuration: | Dual |
| Continuous Collector Current at 25 C: | 275 A |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package / Case: | 62 mm |
| Packaging: | Tray |
| Part # Aliases: | SP000100707 FF200R12KS4HOSA1 |
| Pd - Power Dissipation: | 1400 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Series: | IGBT2 Fast |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 335 |
