FF200R12KE3HOSA1, БТИЗ массив и модульный транзистор, Dual, 295 А, 1.7 В, 1.05 кВт, 125 °C, Module

Код товара: 17567
Артикул: N/A
Характеристики
Производитель INFINEON TECHNOLOGIES AG.
Base Product Number FF200R12 ->
Configuration: Dual
Current - Collector Cutoff (Max) 5mA
ECCN EAR99
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36300,00 
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Модули биполярных транзисторов с изолированным затвором (IGBT) 1200V 200A DUAL
Основные параметры
Base Product Number FF200R12 ->
Configuration: Dual
Current - Collector Cutoff (Max) 5mA
ECCN EAR99
HTSUS 8541.29.0095
Input Standard
Input Capacitance (Cies) @ Vce 14nF @ 25V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Chassis Mount
NTC Thermistor Yes
Operating Temperature -40В°C ~ 125В°C
Package Bulk
Package/Case: IS5a(62 mm)-7
Power - Max 1050W
REACH Status REACH Unaffected
Supplier Device Package Module
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V | 200A
Voltage - Collector Emitter Breakdown (Max) 1200V
Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 295 A
Factory Pack Quantity: Factory Pack Quantity: 10
Gate-Emitter Leakage Current: 400 nA
Manufacturer: Infineon
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: +125 C
Minimum Operating Temperature: -40 C
Mounting Style: Chassis Mount
Packaging: Tray
Part # Aliases: SP000100735 FF200R12KE3HOSA1
Pd - Power Dissipation: 1050 W
Product Category: IGBT Modules
Product Type: IGBT Modules
Product: IGBT Silicon Modules
Series: Trenchstop IGBT3-E3
Subcategory: IGBTs
Tradename: TRENCHSTOP
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