| Производитель | INFINEON TECHNOLOGIES AG. |
| Корпус | 62 mm |
| Base Product Number | FF200R12 -> |
| Configuration: | Dual |
| Current - Collector Cutoff (Max) | 5mA |
Биполярный транзистор IGBT, 1200 В, 200 А, 1050Вт
| Основные параметры | |
| Корпус | 62 mm |
| Base Product Number | FF200R12 -> |
| Configuration: | Dual |
| Current - Collector Cutoff (Max) | 5mA |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 14nF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Chassis Mount |
| NTC Thermistor | Yes |
| Operating Temperature | -40В°C ~ 125В°C |
| Package | Bulk |
| Package/Case: | IS5a(62 mm)-7 |
| Power - Max | 1050W |
| REACH Status | REACH Unaffected |
| Supplier Device Package | Module |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V | 200A |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Continuous Collector Current at 25 C: | 295 A |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Packaging: | Tray |
| Part # Aliases: | SP000100735 FF200R12KE3HOSA1 |
| Pd - Power Dissipation: | 1050 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Series: | Trenchstop IGBT3-E3 |
| Subcategory: | IGBTs |
| Tradename: | TRENCHSTOP |
| Вес, г | 340 |
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