FF150R12RT4HOSA1, Trans IGBT Module N-CH 1200V 150A 790000mW Automotive 7-Pin 34MM-1 Tray

Код товара: 17284
Артикул: N/A
Характеристики
Производитель INFINEON TECHNOLOGIES AG.
Channel Type N
Configuration Series
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 150 A
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19070,00 
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Semiconductor – Discrete > Power Discrete > Transistor – IGBT Module

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V.

Основные параметры
Channel Type N
Configuration Series
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 150 A
Maximum Gate Emitter Voltage ±20V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 790 W
Minimum Operating Temperature -40 °C
Mounting Type Panel Mount
Package Type AG-34MM-1
Transistor Configuration Series