| Производитель | INFINEON TECHNOLOGIES AG. |
| Корпус | 62 mm |
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 1.7 V |
Силовой модуль IGBT N-канальный 1200В 225А
| Основные параметры | |
| Корпус | 62 mm |
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Collector-Emitter Saturation Voltage | 1.7 V |
| Configuration | Dual |
| Continuous Collector Current at 25 C | 225 A |
| Factory Pack Quantity | 10 |
| Gate-Emitter Leakage Current | 400 nA |
| Height | 30.5 mm |
| Length | 106.4 mm |
| Manufacturer | Infineon |
| Maximum Gate Emitter Voltage | +/-20 V |
| Maximum Operating Temperature | +125 C |
| Minimum Operating Temperature | -40 C |
| Mounting Style | Screw |
| Package / Case | 62 mm |
| Part # Aliases | FF150R12KE3GHOSA1 SP000100740 |
| Pd - Power Dissipation | 780 W |
| Product | IGBT Silicon Modules |
| Product Category | IGBT Modules |
| RoHS | N |
| Unit Weight | 12 oz |
| Width | 61.4 mm |
| Вес, г | 364.4 |
