| Производитель | NXP Semiconductor |
| Корпус | to236 |
| кол-во в упаковке | 3000 |
| Ir - Reverse Current | 10nA @ 11.2V |
| Pd - Power Dissipation | 250mW |
Описание Диод: стабилитрон: 0,25Вт: 18В: SMD: бобина, лента: SOT23
| Основные параметры | |
| Корпус | to236 |
| кол-во в упаковке | 3000 |
| Ir - Reverse Current | 10nA @ 11.2V |
| Pd - Power Dissipation | 250mW |
| Tolerance | В±2% |
| Vz - Zener Voltage | 17.6V(Min)~18.4V(Max) |
| Diode Configuration | Single |
| Maximum Power Dissipation | 250 mW |
| Mounting Type | Surface Mount |
| Nominal Zener Voltage | 2.4 V To 75V |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Zener Type | Voltage Regulator |
| Zener Voltage Tolerance | 5% |
| Maximum Operating Temperature | +150 °C |
| Maximum Reverse Leakage Current | 50nA |
| Maximum Zener Impedance | 45Ω |
| Minimum Operating Temperature | -65 °C |
| Test Current | 5mA |
| Typical Voltage Temperature Coefficient | 14.4mV/K |
| Zener Voltage Vz Typ | 18V; Power Dissipation Pd |
| Вес, г | 0.05 |
