Производитель	STMicroelectronics
Корпус	top3f
Automotive	No
Average Gate Power Dissipation (W)	1
Circuit Fusing Consideration (A²S)	1680

Основные параметры
Корпус	top3f
Automotive	No
Average Gate Power Dissipation (W)	1
Circuit Fusing Consideration (A²S)	1680
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Gate Peak Inverse Voltage (V)	5
Maximum Gate Trigger Current (mA)	80
Maximum Gate Trigger Voltage (V)	1.3
Maximum Holding Current (mA)	150
Maximum Latching Current (mA)	200
Maximum Operating Temperature (°C)	125
Maximum Rate of Rise of Off-State Voltage (V/us)	1000(Min)
Maximum Rate of Rise of On-State Current (A/us)	50
Minimum Operating Temperature (°C)	-40
Mounting	Through Hole
Part Status	Active
PCB changed	3
Peak On-State Voltage (V)	1.9@100A
Phase Control	No
Pin Count	3
PPAP	No
Rated Average On-State Current (A)	32
Repetitive Peak Forward Blocking Voltage (V)	600
Repetitive Peak Off-State Current (mA)	0.01
Repetitive Peak Reverse Voltage (V)	600
RMS On-State Current (A)	50
Standard Package Name	TOP
Supplier Package	TOP Insulated
Supplier Temperature Grade	Industrial
Surge Current Rating (A)	610
Tab	Tab
Maximum Operating Temperature	+125 °C
Minimum Operating Temperature	-40 °C
Mounting Type	Through Hole
Package Type	TOP3
Thyristor Type	SCR
Вес, г	3.925

BTW69-600RG, Тиристор 600В 50А 80мА