Производитель	STMicroelectronics
Корпус	top3f
Brand:	STMicroelectronics
Breakover Current IBO Max:	610 A
Current Rating:	50 A

Основные параметры
Корпус	top3f
Brand:	STMicroelectronics
Breakover Current IBO Max:	610 A
Current Rating:	50 A
Factory Pack Quantity: Factory Pack Quantity:	600
Gate Trigger Current - Igt:	80 mA
Gate Trigger Voltage - Vgt:	1.3 V
Holding Current Ih Max:	150 mA
Manufacturer:	STMicroelectronics
Maximum Gate Peak Inverse Voltage:	5 V
Maximum Operating Temperature	+125 °C
Minimum Operating Temperature	-40 °C
Mounting Style:	Through Hole
Non Repetitive On-State Current:	610 A
Off-State Leakage Current @ VDRM IDRM:	10 uA
Package / Case:	TO-3P-3
Packaging:	Tube
Product Category:	SCRs
Product Type:	SCRs
Rated Repetitive Off-State Voltage VDRM:	5 V
Series:	BTW69
Subcategory:	Thyristors
Type:	50 A SCRs
Vf - Forward Voltage:	1.9 V
Maximum Gate Trigger Current	80mA
Maximum Gate Trigger Voltage	1.3V
Maximum Holding Current	150mA
Mounting Type	Through Hole
Package Type	TOP3
Peak On-State Voltage	1.9V
Pin Count	3
Rated Average On-State Current	32A
Repetitive Peak Forward Blocking Voltage	1200V
Repetitive Peak Off-State Current	0.01mA
Repetitive Peak Reverse Voltage	1200V
Surge Current Rating	610A
Thyristor Type	SCR
Maximum Gate Peak Inverse Voltage - (V)	5
Maximum Gate Trigger Current - (mA)	80
Maximum Holding Current - (mA)	150
Operating Temperature - (??C)	-40~125
Peak On-State Voltage - (V)	1.9@100A
Rated Average On-State Current - (A)	32
Repetitive Peak Forward Blocking Voltage - (V)	1200
Repetitive Peak Off-State Current - (mA)	0.01
Repetitive Peak Reverse Voltage - (V)	1200
Standard Package Name	TOP
Supplier Package	TOP Insulated
Surge Current Rating - (A)	610
Вес, г	3.925

BTW69-1200RG, Тиристор 1200В 50А 80мА