| Производитель | INFINEON TECHNOLOGIES AG. |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2.5 V |
| Configuration: | Full Bridge |
| Основные параметры | |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 2.5 V |
| Configuration: | Full Bridge |
| Continuous Collector Current at 25 C: | 35 A |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 180 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package / Case: | EconoPACK 2A |
| Packaging: | Tray |
| Part # Aliases: | SP000100370 BSM25GD120DN2BOSA1 |
| Pd - Power Dissipation: | 200 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 180 |
