A1P35S12M3, IGBT Modules ACEPACK1 sixpack topology, 1200 V, 35 A trench-gate field stop IGBT M series, so

Код товара: 11709
Артикул: A1P35S12M3
Характеристики
Производитель STMicroelectronics
Brand: STMicroelectronics
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.95 V
Configuration: 6-Pack
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12430,00 
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SemiconductorsDiscrete SemiconductorsTransistorsIGBT Modules

ACEPACK™ IGBT Modules STMicroelectronics​ ACEPACK™ IGBT Modules are a family of new plastic power modules developed to address power management solutions and industrial applications. The ACEPACK™ 1 and ACEPACK™ 2 packages are introduced with both Converter Inverter Brake (CIB) and six-pack topologies that integrate the advanced trench-gate field-stop technologies. These ACEPACK IGBT-modules feature ACEPACK 1 or ACEPACK 2 power modules, integrated Negative Temperature Coefficient (NTC), and CIB or six-pack topology. These modules cover the appropriate use of the new IGBT-technology by representing the best compromise between conduction and switching-loss to maximize efficiency by 20kHz. These IGBT modules are ideal for application in industrial motor drives, solar panels, welding, and inverters.

Основные параметры
Brand: STMicroelectronics
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.95 V
Configuration: 6-Pack
Continuous Collector Current at 25 C: 35 A
Factory Pack Quantity: 18
Gate-Emitter Leakage Current: 500 nA
Manufacturer: STMicroelectronics
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -40 C
Mounting Style: Through Hole
Package/Case: ACEPACK1
Packaging: Tray
Pd - Power Dissipation: 250 W
Product Category: IGBT Modules
Product Type: IGBT Modules
Product: IGBT Silicon Modules
Subcategory: IGBTs
Technology: Si
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