| Производитель | INFINEON TECHNOLOGIES AG. |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 1.55 V |
| Configuration: | 6-Pack |
1200V Sixpack IGBT Modules
Infineon 1200V Sixpack IGBT Modules are EasyPACK™ 1B sixpack IGBT modules with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, and NTC technology. This technology provides strongly reduced losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V Sixpack IGBT Modules.
| Основные параметры | |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 1.55 V |
| Configuration: | 6-Pack |
| Continuous Collector Current at 25 C: | 200 A |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Packaging: | Tray |
| Part # Aliases: | FS200R12N3T7 SP005337556 |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Series: | FSXR12N3X7G |
| Subcategory: | IGBTs |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 200 A |
| Maximum Gate Emitter Voltage | 20V |
| Maximum Power Dissipation | 20 mW |
