FS200R12N3T7BPSA1, FS200R12N3T7BPSA1 IGBT, 200 A 1200 V

Код товара: 24361
Артикул: FS200R12N3T7BPSA1
Характеристики
Производитель INFINEON TECHNOLOGIES AG.
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 200 A
Maximum Gate Emitter Voltage 20V
Maximum Power Dissipation 20 mW
смотреть полные характеристики
78370,00 
наличие:
Выберите количество:
SemiconductorsDiscrete SemiconductorsIGBTs

The Infineon FS200 is a EconoPACK 3 module with IGBT and emitter controlled diode and NTC. Low VCEsat

Основные параметры
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 200 A
Maximum Gate Emitter Voltage 20V
Maximum Power Dissipation 20 mW
Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 1.55 V
Configuration: 6-Pack
Continuous Collector Current at 25 C: 200 A
Factory Pack Quantity: Factory Pack Quantity: 10
Gate-Emitter Leakage Current: 100 nA
Manufacturer: Infineon
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -40 C
Packaging: Tray
Part # Aliases: FS200R12N3T7 SP005337556
Product Category: IGBT Modules
Product Type: IGBT Modules
Product: IGBT Silicon Modules
Series: FSXR12N3X7G
Subcategory: IGBTs