FS100R12KE3BOSA1, БТИЗ массив и модульный транзистор, Six Pack [Full Bridge], 140 А, 1.7 В, 480 Вт, 125 °C, Module

Код товара: 23834
Артикул: FS100R12KE3BOSA1
Характеристики
Производитель INFINEON TECHNOLOGIES AG.
Automotive No
Channel Type N
Configuration Hex
ECCN (US) EAR99
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51230,00 
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Trans IGBT Module N-CH 1200V 140A 480W 36-Pin ECONO3-4 Tray
Основные параметры
Automotive No
Channel Type N
Configuration Hex
ECCN (US) EAR99
EU RoHS Compliant with Exemption
Maximum Collector-Emitter Voltage (V) 1200
Maximum Continuous Collector Current (A) 140
Maximum Gate Emitter Leakage Current (uA) 0.4
Maximum Gate Emitter Voltage (V) ±20
Maximum Operating Temperature (°C) 125
Maximum Power Dissipation (mW) 480
Minimum Operating Temperature (°C) -40
Mounting Screw
Packaging Tray
Part Status NRND
PCB changed 36
Pin Count 36
PPAP No
Supplier Package ECONO3-4
Typical Collector Emitter Saturation Voltage (V) 1.7
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 140 A
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 480 W
Number of Transistors 6
Вес, г 348.8