FP50R12KE3BOSA1, IGBT Array & Module Transistor, N Channel, 75 A, 1.7 V, 280 W, 1.2 kV, Module

Код товара: 22470
Артикул: N/A
Характеристики
Производитель INFINEON TECHNOLOGIES AG.
Automotive No
Channel Type N
Configuration Hex
ECCN (US) EAR99
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Описание Модуль CBI, 1200В 75A ECONO Характеристики

Категория Транзистор
Тип модуль
Вид IGBT
Основные параметры
Automotive No
Channel Type N
Configuration Hex
ECCN (US) EAR99
EU RoHS Compliant with Exemption
Maximum Collector-Emitter Voltage (V) 1200
Maximum Continuous Collector Current (A) 75
Maximum Gate Emitter Leakage Current (uA) 0.4
Maximum Gate Emitter Voltage (V) ±20
Maximum Operating Temperature (°C) 125
Maximum Power Dissipation (mW) 270
Minimum Operating Temperature (°C) -40
Mounting Screw
Packaging Tray
Part Status Active
PCB changed 35
Pin Count 35
PPAP No
Supplier Package ECONO3-3
Typical Collector Emitter Saturation Voltage (V) 1.7
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 75 A
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 280 W
Number of Transistors 7
Вес, г 0.306