FP15R12W1T4, IGBT Modules IGBT-MODULE

Код товара: 21035
Артикул: FP15R12W1T4
Характеристики
Производитель INFINEON TECHNOLOGIES AG.
Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.85 V
Configuration: 3-Phase Inverter
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13430,00 
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SemiconductorsDiscrete SemiconductorsTransistorsIGBT Modules
Основные параметры
Brand: Infineon Technologies
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.85 V
Configuration: 3-Phase Inverter
Continuous Collector Current at 25 C: 28 A
Factory Pack Quantity: Factory Pack Quantity: 24
Gate-Emitter Leakage Current: 400 nA
Manufacturer: Infineon
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -40 C
Mounting Style: Chassis Mount
Package / Case: EASY1B
Packaging: Tray
Part # Aliases: SP000364071 FP15R12W1T4BOMA1
Pd - Power Dissipation: 130 W
Product Category: IGBT Modules
Product Type: IGBT Modules
Product: IGBT Silicon Modules
Series: Trenchstop IGBT4-T4
Subcategory: IGBTs
Technology: Si
Tradename: EasyPIM
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