Производитель | INFINEON TECHNOLOGIES AG. |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Continuous Collector Current | 900 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 5.1 kW |
Основные параметры | |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Continuous Collector Current | 900 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 5.1 kW |
Number of Transistors | 2 |
Вес, г | 1 |