| Производитель | INFINEON TECHNOLOGIES AG. |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 1.75 V |
| Configuration: | Dual |
| Основные параметры | |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1200 V |
| Collector-Emitter Saturation Voltage: | 1.75 V |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Packaging: | Tray |
| Part # Aliases: | FF800R12KE7_E SP005568685 |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | IGBT7-E7 |
![FS50R12KE3BOSA1, БТИЗ массив и модульный транзистор, Six Pack [Full Bridge], 75 А, 1.7 В, 270 Вт, 150 °C, Module](https://euroimport-it.com/wp-content/uploads/2024/05/doc004431902.jpg)
