FF75R12RT4HOSA1, FF75R12RT4HOSA1 Series IGBT Module, 75 A 1200 V, 7-Pin 34MM Module, Panel Mount

Код товара: 19639
Артикул: FF75R12RT4HOSA1
Характеристики
Производитель INFINEON TECHNOLOGIES AG.
Channel Type N
Configuration Series
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 75 A
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30810,00 
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SemiconductorsDiscrete SemiconductorsIGBTs

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V.

Основные параметры
Channel Type N
Configuration Series
Maximum Collector Emitter Voltage 1200 V
Maximum Continuous Collector Current 75 A
Maximum Gate Emitter Voltage ±20V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 395 W
Minimum Operating Temperature -40 °C
Mounting Type Panel Mount
Package Type 34MM Module
Pin Count 7
Transistor Configuration Series
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