FF300R12ME4, IGBT Modules IGBT 1200V 300A

Код товара: 18747

Артикул: FF300R12ME4

FF300R12ME4, IGBT Modules IGBT 1200V 300A

Характеристики

Производитель	INFINEON TECHNOLOGIES AG.
Brand:	Infineon Technologies
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.75 V
Configuration:	Dual

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Описание
Технические характеристики

SemiconductorsDiscrete SemiconductorsTransistorsIGBT Modules

EconoDUAL™ 3 IGBT Modules Infineon Technologies EconoDUAL™ 3 IGBT Modules are a solution for many applications requiring reliable, cost-effective power electronics. The Infineon Technologies EconoDUAL 3 can support currents ranging from 100A to 900A at various voltages, including 600V, 650V, 1200V, and 1700V. The device is equipped with state-of-the-art IGBT7 or IGBT4 technologies. The modules offer exceptional power density and cycling capability, and the symmetrical design allows for optimized current sharing between IGBT half bridges. This feature makes them ideal for parallel operation. EconoDUAL 3 is a versatile and efficient option for electric vehicles, renewable energy, or general-purpose drives.

Основные параметры
Brand:	Infineon Technologies
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.75 V
Configuration:	Dual
Continuous Collector Current at 25 C:	450 A
Factory Pack Quantity:	10
Gate-Emitter Leakage Current:	400 nA
Manufacturer:	Infineon
Maximum Gate Emitter Voltage:	20 V
Maximum Operating Temperature:	+125 C
Minimum Operating Temperature:	-40 C
Mounting Style:	Chassis Mount
Packaging:	Tray
Part # Aliases:	SP000405060 FF300R12ME4BOSA1
Pd - Power Dissipation:	1.6 kW
Product Category:	IGBT Modules
Product Type:	IGBT Modules
Product:	IGBT Silicon Modules
Subcategory:	IGBTs
Technology:	Si
Вес, г	345