| Производитель | INFINEON TECHNOLOGIES AG. |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.7 kV |
| Configuration: | Dual |
| Continuous Collector Current at 25 C: | 1.2 kA |
| Основные параметры | |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.7 kV |
| Configuration: | Dual |
| Continuous Collector Current at 25 C: | 1.2 kA |
| Factory Pack Quantity: Factory Pack Quantity: | 2 |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Packaging: | Tray |
| Part # Aliases: | DD1200S17H4B2BOSA2 |
| Pd - Power Dissipation: | 1.2 MW |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Series: | Diodes IGBT EC4 Module |
| Subcategory: | IGBTs |
