| Производитель | Mitsubishi Electric |
| Channel Type | N |
| Configuration | Dual |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 450 |
The Mitsubishi Electric 1200V of dual IGBT module has flat base and six driver per module with low profile.
| Основные параметры | |
| Channel Type | N |
| Configuration | Dual |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 450 |
| Maximum Gate Emitter Voltage | 20V |
| Mounting Type | PCB Mount |
| Number of Transistors | 2 |
| Package Type | Module |
| Transistor Configuration | Dual Half Bridge |
| Вес, г | 300 |
![TIP121, Биполярный транзистор, NPN, (Darlington) [TO-220]](https://euroimport-it.com/wp-content/uploads/2024/09/doc001214003.jpg)
