| Производитель | Microchip Technology |
| Brand: | Microchip Technology |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Continuous Collector Current at 25 C: | 215 A |
| Основные параметры | |
| Brand: | Microchip Technology |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Continuous Collector Current at 25 C: | 215 A |
| Factory Pack Quantity: | 1 |
| Gate-Emitter Leakage Current: | 600 nA |
| Manufacturer: | Microchip |
| Maximum Gate Emitter Voltage: | 30 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Chassis Mount |
| Operating Temperature Range: | -55 C to+150 C |
| Package / Case: | SOT-227-4 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 625 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 31 |
